Non-Volatile Indium Tin Oxide Electro-Optic Switch

机译：非易失性氧化铟锡光电开关

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摘要

A 9.9-μm-long non-volatile silicon electro-optic switch is proposed based on the utilization of indium tin oxide (ITO) as a floating gate and by exploiting the ITO epsilon-near-zero (ENZ) regime in the telecom C-band.

机译：提出了一种利用铟锡氧化物（ITO）作为浮栅并利用电信C-中的ITO epsilon-near-zero（ENZ）体制的9.9μm长的非易失性硅电光开关。乐队。

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《International Conference on Group IV Photonics》|2019年|1-2|共2页
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Jorge Parra; Irene Olivares; Antoine Brimont; Pablo Sanchis;
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Nanophotonics; Optical switches; Signal to noise ratio; Indium tin oxide; Silicon; Optimized production technology;

机译：纳米光子学;光学开关;信噪比;氧化铟锡;硅;优化生产技术;

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专利

1. Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlO_x/indium tin oxide flexible device [J] . Fang Yuan, Jer-Chyi Wang, Zhigang Zhang, _Applied Physics Express . 2014,第2期

机译：用于Al / AlO_x /铟锡氧化物柔性器件的非极性电阻切换的铝和铟混合导电丝
2. On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides [J] . Wouters Dirk J., Menzel Stephan, Rupp Jonathan A. J., Faraday discussions . 2019,第期

机译：在非易失性和挥发性电阻开关氧化物中I-V切换特性的普遍性
3. Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO₂ Fluid [J] . Chang Kuan-Chang, Tsai Tsung-Ming, Chang Ting-Chang, Electron Device Letters, IEEE . 2015,第6期

机译：通过超临界CO _{2 流体在铟锡氧化物电极上进行氢化物氧化来改善基于氧化硅的RRAM的电阻开关特性}
4. Non-Volatile Indium Tin Oxide Electro-Optic Switch [C] . Jorge Parra, Irene Olivares, Antoine Brimont, International Conference on Group IV Photonics . 2019

机译：非易失性铟锡氧化物电光开关
5. Investigation of metal oxide dielectrics for non-volatile floating gate and resistance switching memory applications. [D] . Chakrabarti, Bhaswar. 2014

机译：用于非易失性浮栅和电阻开关存储应用的金属氧化物电介质的研究。
6. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide [O] . Joong-Hyun Park, Myung-Hun Shin, Jun-Sin Yi 2019

机译：以富含Si的SiOX作为电荷陷阱层和铟锡锌氧化物的透明非易失性存储器件的特性
7. Indium-Tin-Oxide for High-performance Electro-optic Modulation [O] . Ma Zhizhen, Li Zhuoran, Liu Ke, 2015

机译：用于高性能电光调制的铟锡氧化物
8. Oxide Semiconductors with Non-Volatile Resistance Switching [R] . Skowronski, M., Bain, J. A., Salvador, P. A. 2009

机译：具有非易失性电阻开关的氧化物半导体

Non-Volatile Indium Tin Oxide Electro-Optic Switch

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