GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium

摘要

We use strain redistribution to locally enhance strain in GeSn layers. We demonstrate uniaxial tensile strain in microbridges with lasing cavities tuned over the 3.1 to 4.6-μm range, and thresholds lower than 10 kW.cm-2 at 25K, in pulsed excitation mode. Laser operation vanishes around 273K.