Low-Loss Silicon Technology for High-Q Bright Quantum Sources

摘要

Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q₁ >4 × 10⁵) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.