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Bandwidth Comparison of Topside Waveguide-to-Microstrip Transitions with Back-Short Waveguide and with Double-Layer Substrate in Millimeter-Wave Band

机译:毫米波频带中带反短波波导和双层基板的顶侧波导至微带过渡的带宽比较

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Topside waveguide-to-microstrip transitions whose waveguide sits on the top of the substrate were developed in the millimeter-wave band. A substrate is attached on a back-short waveguide and the WR-10 waveguide is set on them. The microstrip line is inserted into the WR-10 waveguide, while the microstrip line is inserted into the backshort waveguide of the ordinary transition. A topside waveguide-to-microstrip transition with double layer substrate has been also developed. A coupling patch is located on the top surface with spacing of the upper substrate thickness from the microstrip signal line patterned between the upper and the lower substrates. The performance of the topside transitions with a back-short waveguide is compared with the transition with double layer substrate and the ordinary transition in this paper.
机译:波导位于基板顶部的顶侧波导至微带跃迁是在毫米波波段中形成的。将衬底附着在后向短路波导上,并在其上设置WR-10波导。将微带线插入到WR-10波导中,而将微带线插入到普通过渡的backshort波导中。还已经开发了具有双层衬底的顶侧波导到微带的过渡。耦合贴片位于顶表面上,上基板厚度与在上基板和下基板之间构图的微带信号线之间隔开一定距离。将背向短波导的顶侧跃迁的性能与双层衬底的跃迁和普通跃迁的性能进行了比较。

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