High Temperature Gate Driver Design Using Discrete CMOS Devices

摘要

High temperature (HT) operating capability is one vital feature of silicon carbide (SiC) power devices, HT gate driver technology is important when taking full advantage of SiC devices. CMOS discrete devices are selected to realize the important functions of HT gate driver because of their HT resistance and simple circuit structure. HT gate driver can be divided into isolation stage and buffer stage. The method based on modulation and demodulation is used in isolation stage. The buffer stage contains a level shifting circuit and a push-pull driver circuit. Double pulse test (DPT) is used to verify the performance of HT gate driver and the 1200V/300A SiC MOSFET power module can be driven well under the test situation of 600V/210A.