Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam

摘要

A room temperature GaN-to-Si bonding was performed via an intermediate Atomic-Layer-Deposition Al₂O₃ layer by using O plasma. The ratio of bonded area of 80% was achieved for a 4-inch wafer. The bonded area was uniform without distinguishable cracks or voids, and can bear the cutting force from the wafer scriber.