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Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature

机译:通过在室温下表面活性键合制造的Si / GaAs接口的平面视图透射电子显微镜

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摘要

Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
机译:通过平面 - 视透电子显微镜检查通过在室温下通过表面活化键合制造的Si / GaAs接口。假设界面电阻源于在粘合过程中引入的Si和GaAs基板上的表面缺陷。

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