Ultra-Low Voltage Current Biasing Highly Immune to EMI

摘要

A new CMOS Ultra-Low Voltage (ULV) current bias solution to properly source Integrated Circuits (ICs) operating in subthreshold even in the presence of Electromagnetic Interference (EMI) is presented. On the basis of the properties of ULV ICs building blocks such as the Current Splitter and Current Correlator, a novel current bias method is proposed. The EMI robustness of the proposed solution is compared with that of conventional current mirrors and evaluated by analytic means and time-domain simulation with reference to the AMS C35 0.35μ m CMOS technology process. On this basis, the higher immunity to EMI of the proposed solution has been shown.