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Comprehensive Evaluation of Supply Voltage Underscaling in FPGA on-Chip Memories

机译:FPGA片内存储器中电源电压降级的综合评估

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In this work, we evaluate aggressive undervolting, i.e., voltage scaling below the nominal level to reduce the energy consumption of Field Programmable Gate Arrays (FPGAs). Usually, voltage guardbands are added by chip vendors to ensure the worst-case process and environmental scenarios. Through experimenting on several FPGA architectures, we measure this voltage guardband to be on average 39% of the nominal level, which in turn, delivers more than an order of magnitude power savings. However, further undervolting below the voltage guardband may cause reliability issues as the result of the circuit delay increase, i.e., start to appear faults. We extensively characterize the behavior of these faults in terms of the rate, location, type, as well as sensitivity to environmental temperature, with a concentration of on-chip memories, or Block RAMs (BRAMs). Finally, we evaluate a typical FPGA-based Neural Network (NN) accelerator under low-voltage BRAM operations. In consequence, the substantial NN energy savings come with the cost of NN accuracy loss. To attain power savings without NN accuracy loss, we propose a novel technique that relies on the deterministic behavior of undervolting faults and can limit the accuracy loss to 0.1% without any timing-slack overhead.
机译:在这项工作中,我们评估了严重的欠压,即电压缩放低于标称电平以降低现场可编程门阵列(FPGA)的能耗。通常,芯片供应商会添加电压保护带,以确保最坏情况下的过程和环境场景。通过在几种FPGA架构上进行实验,我们测得该电压保护带平均为标称电平的39%,这反过来又节省了一个数量级以上的功耗。然而,由于电路延迟增加的结果,电压保护带以下的进一步欠压可能引起可靠性问题,即开始出现故障。我们通过集中的片上存储器或Block RAM(BRAM)来根据速率,位置,类型以及对环境温度的敏感性来广泛地描述这些故障的行为。最后,我们在低压BRAM操作下评估了典型的基于FPGA的神经网络(NN)加速器。结果,大量的NN能量节省伴随着NN精度损失的代价。为了节省功率而不造成NN精度损失,我们提出了一种新颖的技术,该技术依赖于欠压故障的确定性行为,并且可以将精度损失限制为0.1%,而不会产生任何时序松弛开销。

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