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A Novel 0.6V MCML D-Latch Topology exploiting Dynamic Body Bias Threshold Lowering

机译:利用动态人体偏置阈值降低的新型0.6V MCML D锁存拓扑

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This paper presents a novel topology to implement CML D-Latches in deeply scaled CMOS technologies under very low supply voltage requirements. The proposed modified Folded MCML D-Latch topology exploits a dynamic body bias approach to achieve a reduction of the threshold voltage of about 100mV thus allowing proper operation with a minimum supply voltage as low as 0.6V. Simulation results in a commercial 40nm CMOS process are provided to show the advantages of the proposed approach with respect to the state of the art. At the best of our knowledge, no other CML D-Latch topologies are able to operate at such a low supply voltage. The triple-tail D-Latch, also known as low voltage CML D-Latch allows a minimum supply voltage of 0.8V in the same reference 40nm CMOS process.
机译:本文提出了一种新的拓扑结构,可以在非常低的电源电压要求下,在深度扩展的CMOS技术中实现CML D锁存器。拟议的改进的折叠式MCML D锁存拓扑利用动态主体偏置方法来实现将阈值电压降低约100mV的功能,从而允许在最低电源电压低至0.6V的情况下正常工作。提供了商用40nm CMOS工艺中的仿真结果,以展示所提出方法相对于现有技术的优势。据我们所知,没有其他CML D-Latch拓扑能够在如此低的电源电压下运行。三尾D型锁存器,也称为低压CML D型锁存器,在相同的参考40nm CMOS工艺中,允许的最小电源电压为0.8V。

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