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A Novel Half-Rate Dual-Response Phase Detector Implementation for a 25-28.3 Gb/s Clock and Data Recovery Circuit

机译:适用于25-28.3 Gb / s时钟和数据恢复电路的新颖的半速率双响应相位检测器实现

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The implementation of a novel half-rate dual-response phase detector, generating both linear and binary responses concurrently, is presented. Processing both binary and linear responses to drive a single on-chip voltage-controlled oscillator (VCO), lower jitter generation and higher jitter tolerance are attained simultaneously, providing a superior jitter performance. The phase detector is measured in a 25-28.3 Gb/s clock and data recovery (CDR) circuit with 7.75ps peak-to-peak total jitter at 1.0E-12 bit error rate (BER). The jitter tolerance is twice better than the optical module required tolerance mask over the entire frequency range. The chip is fabricated in 200GHz/280GHz (fT/fMAX) IBM 8HP 0.13μm SiGe BiCMOS process.
机译:提出了一种新颖的半速率双响应相位检测器的实现,该检测器同时生成线性和二进制响应。同时处理二进制和线性响应以驱动单个片上压控振荡器(VCO),可产生更低的抖动和更高的抖动容限,从而提供卓越的抖动性能。相位检测器在25-28.3 Gb / s时钟和数据恢复(CDR)电路中进行测量,在1.0E-12误码率(BER)时峰峰值总抖动为7.75ps。在整个频率范围内,抖动容限是光模块所需容限掩模的两倍。该芯片在200GHz / 280GHz(f T /F MAX )IBM 8HP0.13μmSiGe BiCMOS工艺。

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