Characterization of GaN-HEMT in cascode topology and comparison with state of the art-power devices

摘要

The paper presents a fully static and dynamic characterization and also reliability investigations of a 650V, 28mΩ GaN-HEMT in Cascode-topology. To show the overall performance of GaN-HEMT the output current per chip area (A per mm²) versus switching frequency of a three phase inverter is presented for the 650V GaN-HEMT in comparison to 650V Si-IGBT3 (IFX) and Si-CooLMOS C7 (IFX, with fast Si-FWD and SiC-FWD).