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Field Enhancement in a Terahertz Plasmonic Structure and It's Sensing Applications

机译:太赫兹等离子结构中的场增强及其传感应用

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In this paper, we investigate the plasmonic response and electric field enhancement in a periodic array of InSb bowtie antenna with different gap distances and different carrier concentrations in the THz range, theoretically. We demonstrate the electric field intensity enhances by decreasing the gap distance and increment of InSb carrier concentration. We demonstrate the structure with the lowest gap distance and the highest carrier concentration, strongly enhances the electric field magnitude$(ert oldsymbol{E}ert ^{2}ert oldsymbol{E}_{0}ert ^{2}=79imes 10^{3})$. Also, our results show that by increasing the carrier concentration, the sensitivity and figure of merit (FOM) are improved. Finally, we propose a THz plasmonic sensor with higher sensitivity of 0.64 THz/RIU that can be utilized in important applications such as molecular detection, bio(chemical) and medical sensing in the THz range.
机译:在本文中,我们从理论上研究了具有不同间隙距离和不同载流子浓度的InSb领结天线的周期性阵列中的等离子体响应和电场增强。我们证明电场强度通过减小间隙距离和增加InSb载流子浓度而增强。我们展示了具有最小间隙距离和最高载流子浓度的结构,极大地增强了电场强度 $(\ vert \ boldsymbol { E} \ vert ^ {2} \ vert \ boldsymbol {E} _ {0} \ vert ^ {2} = 79 \ times 10 ^ {3})$ 。而且,我们的结果表明,通过增加载流子浓度,可以提高灵敏度和品质因数(FOM)。最后,我们提出了一种具有0.64 THz / RIU更高灵敏度的THz等离子体传感器,可用于THz范围内的重要应用,例如分子检测,生物(化学)和医学传感。

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