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Analysis and Suppression of Common Mode Voltage for SiC Inverters in Electric Vehicle Applications

机译:电动汽车用SiC逆变器共模电压的分析与抑制

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摘要

SiC MOSFETs are expected to replace Si IGBTs in variable-speed motor drives applications for higher power density of inverters, e.g. in electric vehicle(EV), because of their high switching speed, high junction temperature and high blocking voltage. Common-mode voltage (CMV) which would bring common mode electromagnetic interference (EMI) and damage to motor bearings is an important performance index in electric drive system. However, the impact of high switching speed and high switching frequency on common-mode voltage is still ambiguous. In this paper, theoretical analyses are conducted by FFT to study the influence of high switching speed and high switching frequency on CMV and then the experimental verifications are carried out. On this basis, CMV is suppressed by the software and hardware methods. The experimental results show that either has the ability to restrain CMV. But, the best inhibition effect can be achieved by combining both.
机译:SiC MOSFET有望在变速电机驱动应用中取代Si IGBT,以提高逆变器的功率密度,例如:在电动汽车(EV)中,由于其高开关速度,高结温和高阻断电压。共模电压(CMV)会带来共模电磁干扰(EMI)并损坏电机轴承,这是电驱动系统中的一项重要性能指标。但是,高开关速度和高开关频率对共模电压的影响仍然不明确。本文通过FFT进行了理论分析,研究了高开关速度和高开关频率对CMV的影响,然后进行了实验验证。在此基础上,CMV被软件和硬件方法抑制。实验结果表明,两者均具有抑制CMV的能力。但是,将两者结合可以达到最佳的抑制效果。

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