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The DRAM Latency PUF: Quickly Evaluating Physical Unclonable Functions by Exploiting the Latency-Reliability Tradeoff in Modern Commodity DRAM Devices

机译:DRAM延迟PUF:通过利用现代商品DRAM设备中的延迟-可靠性权衡,快速评估物理不可克隆的功能

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Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have numerous advantages over PUF designs that exploit alternative substrates: DRAM is a major component of many modern systems, and a DRAM-based PUF can generate many unique identiers. However, none of the prior DRAM PUF proposals provide implementations suitable for runtime-accessible PUF evaluation on commodity DRAM devices. Prior DRAM PUFs exhibit unacceptably high latencies, especially at low temperatures (e.g., >125.8s on average for a 64KiB memory segment below 55C), and they cause high system interference by keeping part of DRAM unavailable during PUF evaluation. In this paper, we introduce the DRAM latency PUF, a new class of fast, reliable DRAM PUFs. The key idea is to reduce DRAM read access latency below the reliable datasheet specications using software-only system calls. Doing so results in error patterns that reect the compound eects of manufacturing variations in various DRAM structures (e.g., capacitors, wires, sense ampli- ers). Based on a rigorous experimental characterization of 223 modern LPDDR4 DRAM chips, we demonstrate that these error patterns 1) satisfy runtime-accessible PUF requirements, and 2) are quickly generated (i.e., at 88.2ms) irrespective of operating temperature using a real system with no additional hardware modications. We show that, for a constant DRAM capacity overhead of 64KiB, our implementation of the DRAM latency PUF enables an average (minimum, maximum) PUF evaluation time speedup of 152x (109x, 181x) at 70C and 1426x (868x, 1783x) at 55C when compared to a DRAM retention PUF and achieves greater speedups at even lower temperatures.
机译:物理上不可克隆的功能(PUF)通常用于加密中,以基于其物理微观结构的唯一性来识别设备。基于DRAM的PUF与利用替代基板的PUF设计相比具有许多优势:DRAM是许多现代系统的主要组成部分,而基于DRAM的PUF可以生成许多唯一的标识。但是,现有的DRAM PUF提议均未提供适用于商用DRAM设备上运行时可访问的PUF评估的实现。现有的DRAM PUF表现出不可接受的高延迟,特别是在低温下(例如,对于低于55℃的64KiB存储段,平均> 125.8s),并且它们通过在PUF评估期间保持部分DRAM不可用而引起高系统干扰。在本文中,我们介绍了DRAM延迟PUF,这是一类新型的快速,可靠的DRAM PUF。关键思想是使用纯软件系统调用将DRAM读取访问延迟降低到可靠的数据表规格以下。这样做会导致错误模式,该错误模式反映出各种DRAM结构(例如电容器,导线,感测放大器)中制造变化的复合效应。基于对223种现代LPDDR4 DRAM芯片的严格实验表征,我们证明了这些错误模式1)满足运行时可访问的PUF要求,并且2)不论使用何种实际温度,使用实际系统都可以快速生成(即,在88.2ms时)没有其他硬件药物。我们显示出,对于恒定的64KiB的DRAM容量开销,我们对DRAM延迟PUF的实现使平均(最小,最大)PUF评估时间在70C时加快了152x(109x,181x),在55C时提高了1426x(868x,1783x)与DRAM保留PUF相比,即使在更低的温度下也可以实现更大的加速。

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