Gain Performance of GeSn based n-p-n Heterojunction Phototransistor

机译：GeSn基n-p-n异质结光电晶体管的增益性能

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A n-p-n heterojunction phototransitor with Ge_1-xSn_x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.

机译：具有Ge的n-p-n异质结光电晶体管 _{1-x
锡
_{x
提出了基础。该工作集中在基于优化的基极和集电极掺杂的Sn浓度对器件增益性能的影响上。}}

著录项

来源
《International Conference on Numerical Simulation of Optoelectronic Devices》|2018年|35-36|共2页
会议地点
作者
Ankit Kumar Pandey; Rikmantra Basu; Guo-En Chang;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
Heterojunctions; Metals; Silicon; Photonic band gap; Absorption; Phototransistors; Doping;

机译：异质结;金属;硅;光子带隙;吸收;光敏晶体管;掺杂;

相似文献

外文文献
中文文献
专利

1. Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor [J] . Vedatrayee Chakraborty, Swagata Dey, Rikmantra Basil, Optical and quantum electronics . 2017,第3期

机译：基于GeSn的直接带隙多量子阱异质结光电晶体管的电流增益和外部量子效率建模
2. Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base [J] . Optics Letters . 2020,第5期

机译：基于硅的高响应性GESN短波红外异质结函数，具有浮动底座
3. Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications [J] . Kumar Harshvardhan, Basu Rikmantra Applied physics . 2021,第2期

机译：温度对基于GESN的探测和灵敏度的研究，用于中波红外应用的基于GESN的异质结晶体管的探测和灵敏度
4. Gain Performance of GeSn based n-p-n Heterojunction Phototransistor [C] . Ankit Kumar Pandey, Rikmantra Basu, Guo-En Chang International Conrference on Numerical Simulation of Optoelectronic Devices . 2018

机译：基于GESN的N-P-N异质结法光刻晶体管的增益性能
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors [O] . Yen-Hung Lin, Wentao Huang, Pichaya Pattanasattayavong, -1

机译：可调谐高性能钙钛矿-有机半导体异质结光电晶体管的光解载流子动力学
7. High‐Performance Organic Heterojunction Phototransistors Based on Highly Ordered Copper Phthalocyanine/ para ‐Sexiphenyl Thin Films [O] . Chuan Qian, Jia Sun, Ling‐An Kong, 2016

机译：基于高度有序铜酞菁/乙二酚薄膜的高性能有机异质结光电晶体管
8. High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks [R] . 1991

机译：用于光学神经网络的高增益alGaas / Gaas双异质结达林顿光电晶体管

Gain Performance of GeSn based n-p-n Heterojunction Phototransistor

摘要

著录项

相似文献

相关主题

期刊订阅