High Performance (001) $eta-ext{Ga}_{2}mathrm{O}_{3}$ Schottky Barrier Diode

摘要

A Schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga₂O₃ drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) β-Ga₂O₃ substrate. The thickness and concentration of N-drift layer were 5 μm and 3.8×10¹⁶cm^-3, respectively. The reverse breakdown voltage (BV) and specific on-resistance (Ron) of the fabricated Ga₂O₃ SBD were 825 V and 3.5 mΩ·cm², respectively, leading to a high Baliga figure-of-merit (BV²/Ron) of 194.5 MW·cm^-2. Besides, a high current on/off ratio of 4.2×10¹⁰ was obtained.