A Variability-Aware Analysis and Design Guideline for Write and Read Operations in Crosspoint STT-MRAM Arrays

摘要

Beneliting from emerging resistance-switching mem- ory technologies, crosspoint array has become an attractive array architecture to obtain high storage density. Among the emerging technologies, Spin-Transfer Torque magnetic memory (STT-MRAM) is a potential candidate as storage class memory (SCM) or static/dynamic RAM replacement due to its high write speed, scalability and other interesting characteristics. In this paper, we present a variation-aware comprehensive analysis of the boundary conditions for write and read requirements for the implementation of crosspoint STT-MRAM Arrays. The results of the analysis are very useful as design guide and for choosing a suitable selector device for Crosspoint STT-MRAM arrays.