Ka-Band P-I-N Diode Based Digital Phase Shifter

摘要

Phase shifters are an important part of phased array antennas, which the next generation 5G wireless communication networks will rely on. This paper presents 4-bit and 6-bit digital phase shifters with very low loss and high power handling that function from 27.5 to 29.5 GHz, a frequency band being considered for 5G. This is achieved by using a combination of all shunt P-I-N diodes switches and delay lines on the MACOM A1GaAs P-I-N diode process. The chips have integrated bias networks and work well with MACOM's MADR-009443 quad driver.