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Single-Ended Branch PA Characterisation for Outphasing Amplifiers

机译:用于单相放大器的单端分支PA表征

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Back-off efficiency is a key requirement for load modulated power amplifier (PA) architectures such as Chireix outphasing. This paper studies the impact of second and third harmonic impedance tuning (Z(2f0),Z(3f0)) on the performance of a 10 Watt GaN HEMT branch PA subject to outphasing-like load modulation, operating at 900 MHz. Performance variation of up to 3 dB output power (POUT) and 50% points drain efficiency (DE) with phase manipulation alone of Z(2f0) is recorded. Optimal Z(2f0) is revealed to vary - throughout a fixed and for different - outphasing trajectories. A simple technique is presented, using continuous class F-1 closed form equations, which predicts the intrinsic optimal Z(2f0) for multiple points from five outphasing load trajectories, de-embedded to the current generator (CG) plane of the device.
机译:对于诸如Chireix移相之类的负载调制功率放大器(PA)架构,退避效率是一项关键要求。本文研究了二次和三次谐波阻抗调谐(Z(2f 0 ),Z(3f 0 ))10瓦GaN HEMT支路PA的性能,该支路经过类似移相的负载调制,工作于900 MHz。性能变化高达3 dB输出功率(P OUT )和仅Z(2f)的相位控制即可获得50%的点漏极效率(DE) 0 )记录下来。最佳Z(2f 0 )在整个固定和不同的移相轨迹中都显示出变化。提出了一种使用连续F类的简单技术 -1 封闭形式的方程,它预测了内在最优Z(2f 0 )从五个异相负载轨迹的多个点解嵌入到设备的电流发生器(CG)平面。

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