A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with fmax of 210GHz

摘要

A band-pass gain-boosted distributed amplifier is proposed. The amplifier achieves a bandwidth of 90 GHz at center frequency of 97 GHz and operates up to frequencies as high as 0.67f_max of the transistors. A novel gain-boosted cascode structure as well as band-pass transmission lines are employed to significantly boost the bandwidth and the highest operation frequency of the amplifier. The amplifier shows an average gain of 14.4 dB from 52 GHz to 142 GHz in a 0.13-μm SiGe process with f_max of 210 GHz.