Optical Properties of Thin Black Silicon Films Prepared Electrochemically on the High Doped N-Type C-Si Without Illumination

摘要

During the measurements of FTIR spectra of black porous silicon (PS) samples prepared by electrochemical etching of crystalline n-type silicon substrate we observed interference lines originated by optical non-homogeneity of the samples. This effect has been utilized for estimation of effective parameters of the layer-its thickness and refractive index. This type of structure can be used in production of high efficiency Si solar cells.