Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications

摘要

In this work, a planar-type top-illuminated high-responsivity InP-based avalanche photodetector (APD) was fabricated and characterized. The dark current of 0.55 nA, capacitance of 0.237 pF, responsivity of 12.2 A/W were obtained when APD operated at 0.95 breakdown voltage (V_BR). The eye diagrams of the fabricated APD under 0.95 V_BRto the pseudorandom NRZ code of length 2³¹-1 at 2.5-10 Gb/s were measured. The absence of significant intersymbol interference and the error free for the signals up to 10 Gb/s can be achieved.