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Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

机译：具有超过10 Gbps的操作速度的导电基板上平面型顶部照射INP的平面型顶部照射INP的雪崩光电探测器的制造与表征

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Jheng-Jie Liu; Wen-Jeng Ho; Cho-Chun Chiang; Chi-Jen Teng; Chia-Chun Yu; Yen-Chu Li;
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4. Fabrication and characterization of planar-type top-illuminated high-responsivity InP-based avalanche photodetector for 10 Gbps optical receiver applications [C] . Cho-Chun Chiang, Wen-Jeng Ho, Jheng-Jie Liu, International Symposium on Next Generation Electronics . 2018

机译：用于10 Gbps光接收器应用的平面型顶部照明高响应度基于InP的雪崩光电探测器的制造与表征
5. Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps [O] . Jheng-Jie Liu, Wen-Jeng Ho, Cho-Chun Chiang, 2018

机译：在工作速度超过10 Gbps的导电基板上制造平面型顶部照明的基于InP的雪崩光电探测器并进行表征
6. Fabrication and characterization of avalanche photodetectors [O] . Jeong Hyejin 2010

机译：雪崩光电探测器的制作和表征

Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

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