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Design of Ultralow-Voltage High Speed Flash ADC in 45nm CMOS Technology

机译:采用45nm CMOS技术的超低压高速Flash ADC设计

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Analog to Digital Converters has an indispensable part in todays digitized world as they are suitable for a large range of applications. Flash ADC is the fastest ADC available, but it's power consumption is very large. This paper aims at developing an ultralow-voltage design policy for high speed medium resolution flash ADCs to improve the energy efficiency. The power consumption of a digital system can be minimized by reducing the voltage supply, but only with the hike in the delay time. Here a voltage boosting based comparator with forward body biasing technique is used to develop a flash ADC operating at ultralow-voltage(ULV) area using 45nm CMOS technology. This method reduces the power consumption by keeping the delay time almost constant as the supply voltage reduced. Body-bias calibration technique is used for offset compensation. Here, as a prototype a 5-bit flash ADC operating at 0.4V is developed in Cadence Virtuoso 45nm technology. The power and delay analysis of this proposed comparator shows a reduction in power with a constant delay time when the supply voltage is reduced. The power-delay(PD) product of this comparator is lesser than the conventional ones. The Figure-of-Merit Delay(FD) product of the flash ADC also shows a fair reduction of 0.54 p J n S/c-s.
机译:模数转换器在当今的数字化世界中占有不可或缺的地位,因为它们适用于各种应用。闪存ADC是目前最快的ADC,但功耗非常大。本文旨在为高速中分辨率闪存ADC开发一种超低压设计策略,以提高能效。可以通过减少电源电压来最大程度地降低数字系统的功耗,但是只能通过增加延迟时间来实现。在这里,采用基于正向体偏置技术的基于升压的比较器,以使用45nm CMOS技术开发在超低电压(ULV)区域工作的闪存ADC。该方法通过在电源电压降低时保持延迟时间几乎恒定来降低功耗。体偏置校准技术用于偏移补偿。这里,以Cadence Virtuoso 45nm技术开发了以0.4V工作的5位闪存ADC作为原型。提出的比较器的功率和延迟分析显示,当电源电压降低时,功率以恒定的延迟时间降低。该比较器的功率延迟(PD)乘积比常规乘积小。闪存ADC的品质因数延迟(FD)乘积也显示出0.54 p J n S / c-s的合理降低。

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