A Low Power Single Gate L-shaped TFET for High Frequency Application

摘要

In this manuscript, we have optimize the single gate L-shaped Tunnel field effect transistor (SG-L-TFET) for low power application. In this regard, the simulated SG-L-TFET comprises high ON-current (ION) with low OFF-current (IOFF) and very low sub-threshold swing value (SS) than Conventional dual gate TFETs (DG-TFETs). The high IONis achieved in the SG-L-TFET because of the increased cross-sectional area of band-to-band tunneling (BTBT) junction. In this device structure, BTBT tunneling junction is perpendicular to channel direction which one is differ from the conventional TFET tunneling barrier length (LT). It is more scaleble than other vertical-BTBT-based TFET designs and provides higher IONthan a conventional planar TFET with the same gate overdrive voltage (Vov) of 0.8 V. In this work, analysis has been carried out for the optimization of drain length (LD), source length (LS), dielectric material variation for gate oxide and lower band gap material for source region. Simulation results have confirmed the superiority of SGL-TFETs over the conventional TFETs. In addition, the outcome of device parameters variation on the device functioning has been investigated for the comprehensible validation of its optimization.