Double-Supply Voltage Level Shifter with an Auxiliary Circuit for High-Speed Applications

摘要

This paper describes the characteristics of Dual-Supply Voltage Level Shifter. The circuit is fast and power efficient. It converts low input voltage levels into high output voltage level. The effectiveness of the proposed circuit is obtained by the increasing the strength of the NMOS device, it was done when the NMOS transistor is dragging down the output node Q1, Similarly, power of pull-down transistor is also increased by making use of an auxiliary circuit. The results are obtained after the simulation of actual circuit in 0.18-um technology. It determines the overall energy per evolution of 158 fJ, Power utilization in a static mode of operation is 0.4 nW, and propagation delay of 35 ns for an input frequency of 1 MHz, low-supply voltage level of V_(ddl) = 0.6 v, and high supply voltage level of V_(ddh) = 1 V.