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Photo response of P3HT: PCBM/SWCNT bulk hetrojunction device

机译:P3HT的光响应:PCBM / SWCNT本体异质结器件

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Here, we report the photoresponse of poly (3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl) propyl-1-phenyl [6, 6] C61 (PCBM) bulk heterojunction organic devices. Schottky devices having the structure ITO/P3HT: PCBM/Al and ITO/P3HT: PCBM+SWCNT nanocomposites/Al have been fabricated. Prior to the fabrication of devices, Raman & Photoluminescence studies were performed to study the optical characteristics of polymer blend and nanocomposite; these studies confirm the formation of nanocomposite. I-V characteristics of the devices show a remarkable increase in the current upon light illumination. Further, charge transport analysis shows three different voltage dependent charge transport regions.
机译:在这里,我们报告聚(3-己基噻吩)(P3HT)和1-(3-甲氧基羰基)丙基-1-苯基[6,6] C61(PCBM)本体异质结有机器件的光响应。已经制造了具有结构ITO / P3HT:PCBM / Al和ITO / P3HT:PCBM + SWCNT纳米复合材料/ Al的肖特基器件。在制造器件之前,先进行拉曼和光致发光研究,以研究聚合物共混物和纳米复合材料的光学特性。这些研究证实了纳米复合材料的形成。器件的I-V特性表明,光照后电流显着增加。此外,电荷传输分析显示了三个不同的电压依赖性电荷传输区域。

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