首页> 外文会议>IEEE Electron Devices Technology and Manufacturing Conference >Error Correction Scheme for Reliable RRAM-Based In-Memory Computing
【24h】

Error Correction Scheme for Reliable RRAM-Based In-Memory Computing

机译:基于可靠的RRAM的内存计算纠错方案

获取原文

摘要

Since conventional Hamming-code-based memory error correction scheme cannot be used for in-memory-computing circuits based on resistive random access memory (RRAM), we propose an error correction scheme using an arithmetic code of AN code that can correct the arithmetic errors by the maximum probability to improve the accuracy of dot product. When applied to a convolutional neural network on the MNIST datasets, the proposed error correction scheme largely reduces the accuracy loss.
机译:由于基于常规的基于汉明码的内存纠错方案基于电阻随机存取存储器(RRAM)不能用于内存计算电路,因此我们使用能够纠正算术错误的代码的算术码提出纠错方案 通过提高点产品精度的最大概率。 当应用于Mnist数据集的卷积神经网络时,所提出的纠错方案在很大程度上降低了精度损耗。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号