The photoelectronchemical properties of H:PbS/CdS/TiO2 photoelectrodes

摘要

The work aims at enhancing the photoelectrochemical performance of photoelectrode from two aspects: The TiO NTWs is manufactured by anodic oxidation method and then annealed in hydrogen atmosphere. The as-prepared materials are sensitized with PbS and CdS quantum dots via successive ion layer absorption method (SILAR) method. The as-prepared materials are characterized by scanning electron microscope(FESEM), energy dispersive x-ray (EDX), UV-vis diffused reflectance absorption spectra and X-ray diffraction(XRD). The photoelectrochemical performance of QDs/ H: TiO NTWs is superior to the pure TiO, Under AM 1.5 illumination of 100mW/cm, the best short-circuit photocurrent density is 3.73mA/cm, and corresponding energy covnversation efficiency of 2.06%. The results illustrate that SILAR method and hydrogen treatment method make TiO NTWs has a bright application prospects in solar cells.