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Experimental study of flow boiling in a compact hierarchical manifold microchannel heat sink array

机译:紧凑型分级歧管微通道散热器阵列中流沸腾的实验研究

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This work focuses on the fabrication and experimental characterization of a two-phase hierarchical manifold microchannel heat sink array for intrachip high-heat-flux dissipation. A test device with a 5 mm × 5 mm heated area and 9 × 9 array of heat sinks, each with 18 parallel channels (19 μm × 155 μm), is fabricated in silicon. A multi-layer hierarchical manifold fabricated in silicon is bonded to the heat sink array. Flow boiling experiments are conducted using HFE-7100 as the working fluid at mass fluxes of 200 kg/m2s and 300 kg/m2s. The test device is able to dissipate heat fluxes up to 445 W/cm2 at a chip temperature of less than 40 °C above the fluid and at a pressure drop less than 80 kPa. A maximum heat transfer coefficient of 31,900 W/m2K occurred at a mass flux of 300 kg/m2s and a heat flux of 301 W/cm2. The effects of heat flux on chip temperature, heat transfer coefficient, and pressure drop are investigated.
机译:这项工作专注于芯片内高热通量消散的两相分层歧管微通道散热器阵列的制造和实验特性。用硅制造具有5 mm×5 mm受热面积和9×9散热器阵列的测试设备,每个散热器具有18个平行通道(19μm×155μm)。用硅制造的多层分层歧管结合到散热器阵列。使用HFE-7100作为工作流体,以200 kg / m2s和300 kg / m2s的质量通量进行流煮实验。该测试设备能够在流体上方的芯片温度低于40°C且压降低于80 kPa时散发高达445 W / cm2的热通量。在300 kg / m2s的质量通量和301 W / cm2的热通量下,最大传热系数为31,900 W / m2K。研究了热通量对芯片温度,传热系数和压降的影响。

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