Basic readout circuit applied on FGMOS-based CMOS-MEMS inertial sensing prototypes

摘要

In this work is reported a brief summary of considerations for the design of a basic readout CMOS integrated system applied for the conditioning of small signals taken from a floating-gate based CMOS-MEMS capacitive structure intended for inertial measurement. Both the electromechanical structure and the readout circuit (consisting in a variable capacitor coupled to the gate of a MOSFET and a conventional CMOS amplification stage, respectively) were designed for and fabricated in the 0.5um standard CMOS MPW platform available in ON Semi. Simulation results for every component are presented as well as a comparison with measurements for the second stage of the readout system since the mobile capacitive structure (first stage) needs further post-processing to reach its proper functioning and desired behavior.