Design and realization of a X-band graphene amplifier MMIC

摘要

In this work, we present a graphene amplifier Monolithic Microwave Integrated Circuit (MMIC) operating at X-Band. The graphene field effect transistor (FET) was fabricated on quasi-free-standing bilayer epitaxial graphene on SiC (0001) substrate by a self-aligned fabrication procedure. The small-signal equivalent circuit model of 2× 15 μm graphene FET with 200 nm T-gates was deduced from the measured small-signal S-parameters. The modeled S-parameters show good agreement with experiments from 1 GHz to 20 GHz. Based on the model, the X-band amplifier MMIC was designed and fabricated with independent bias component and impedance matching network composing of inductance and transmission line. A small-signal gain of 2.6 dB and a noise figure of 6.1 dB were achieved in the fabricated amplifier.