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A new all-in-one bandgap reference and robust zero temperature coefficient (TC) point current reference circuit

机译:新型多合一带隙基准和稳健的零温度系数(TC)点电流基准电路

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This manuscript presents a new bandgap reference (BGR) circuit providing dual references of voltage and current in one BGR circuit. The proposed all-in-one BGR circuit combines two proportional to absolute temperature (PTAT) current branches of conventional BGR into one NMOS transistor, avoiding the mismatch of the current branches. It also generates a new complementary proportional to absolute temperature (CTAT) current by adding a positive temperature coefficient (PTC) resistor to BGR output. Combining the two opposite TC currents together, a temperature insensitive current reference with robust zero TC point against process variation can be obtained in one BGR circuit. The BGR circuit is designed and verified in a 0.5μm CMOS technology with an active area of 0.0165mm2. With 3.3-V supply voltage, the BGR circuit provides voltage and current reference of 1.25V and 13.5uA with TCs of 11.6ppm/°C and 58.5ppm/°C over the temperature range from -40°C to 85°C, respectively.
机译:该手稿介绍了一种新的带隙基准(BGR)电路,该电路在一个BGR电路中提供电压和电流的双基准。所提出的多合一BGR电路将常规BGR的两个与绝对温度(PTAT)成比例的电流分支合并到一个NMOS晶体管中,避免了电流分支的失配。通过在BGR输出端增加一个正温度系数(PTC)电阻,它还能产生一个与绝对温度(CTAT)电流成比例的新互补信号。将两个相反的TC电流组合在一起,可以在一个BGR电路中获得一个对温度不敏感的,具有稳定的TC点,不受过程变化影响的电流基准。 BGR电路采用0.5μmCMOS技术进行设计和验证,有效面积为0.0165mm 2 。 BGR电路具有3.3V的电源电压,在-40°C至85°C的温度范围内,分别提供1.25V和13.5uA的电压和电流基准以及TCs分别为11.6ppm /°C和58.5ppm /°C。 。

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