Simulation studies of a phosphor-free monolithic multi-wavelength light-emitting diode

摘要

A monolithic multi-wavelength light emitting diode structure is presented in this paper. The structure is based on two InGaN quantum wells separated by a GaN barrier layer. This structure allows the full activation of each quantum well separately as well as simultaneously with the tuning of applied voltage. Consequently, blue to green color emissions can be generated by tuning the forward bias voltage. The technique of band gap engineering has been deployed to reduce the photon reabsorption hence improving the output power of the device. Dimensions and indium contents of the quantum wells are optimized to enhance the radiative recombination rate and reduce the phonon emission. This paper investigates the carrier distribution profile, IV characteristics, luminous power, radiative recombination rate, conversion efficiency, and spectral power distribution of multi-color light emitting diode.