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Design of 60GHz broadband LNA for 5G cellular using 65nm CMOS technology

机译:使用65nm CMOS技术设计用于5G蜂窝的60GHz宽带LNA

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In this paper, 60GHz millimeter wave (mmWave) two stage common source (CS) cascode low noise amplifier (LNA) with degenerative inductor is designed in 65nm CMOS technology. It has a wide band (57-64GHz) and highly stable characteristics. We have also proposed two different techniques to design the LNA unconditionally stable and increase its linearity without degrading other performancemetrics. Simulation results of a two stage LNA without the stability improvisation show a peak gain of 24.5dB at 61GHz, input return loss of -9.1dB, noise factor (NF) of 1.5dB, static power dissipation Pdc of 6.63mW and is conditionally stable. In one of the methods of designing LNA unconditionally stable is to reduce the gain to 19.5dB by incorporating an additional inductor at the source of second stage amplifier. Linearity is also increased to P1dB of -2.44dBm without degradation of other parameters. Another approach is to maintain the peak gain greater than 22dB by increasing the transconductance of the CMOS transistors. This increases the return loss to -14.5dB. Various obtained results are presented and discussed.
机译:本文采用65nm CMOS技术设计了带有退化电感器的60GHz毫米波(mmWave)两级共源共源共栅低噪声放大器(LNA)。它具有宽带(57-64GHz)和高度稳定的特性。我们还提出了两种不同的技术来无条件地设计LNA,并在不降低其他性能指标的情况下提高其线性度。没有稳定性的两级LNA的仿真结果显示,在61GHz时的峰值增益为24.5dB,输入回波损耗为-9.1dB,噪声系数(NF)为1.5dB,静态功耗Pdc为6.63mW,并且条件稳定。一种设计LNA的方法是无条件稳定的,方法是在第二级放大器的源极加入一个额外的电感器,以将增益降至19.5dB。线性度也提高到-2.44dBm的P1dB,而不会降低其他参数。另一种方法是通过增加CMOS晶体管的跨导来保持峰值增益大于22dB。这将回波损耗增加到-14.5dB。介绍并讨论了各种获得的结果。

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