Performance comparison of different SiC-MOSFETs for high-frequency high-power DC-DC converters

摘要

Wide-band-gap (WBG) semiconductor devices represent an opportunity for reaching higher power densities for power electronic converters due to higher switching speeds, and thus, a size reduction of the passive components is enabled while the total efficiency of the converter is not compromised. In this paper, four SiC-MOSFETs from CREE/Wolfspeed are compared regarding their losses and performance in an application with a high-frequency DC-DC converter. For this purpose, the on-state resistances and body-diode voltage drops of every MOSFET are measured for different drain currents to evaluate the semiconductors static losses. The switching loss of every MOSFET is obtained with a double-pulse test. Three of these MOSFETs are further evaluated in a two-phase interleaved DC-DC converter prototype to investigate the system efficiency. In the end, device C2M0040120D shows the highest potential for high-power high-frequency operation, due to a balance between electrical and thermal properties.