Testing system of multiplying electron gain for electron bombarded semiconductor

摘要

Electron bombardment of semiconductor gain as the main characteristics of electronic bombardment devices affect the overall performance of the device. According to weak signal detection theory, developed a set of multiplying electron gain test system including pre-amplifier circuit and FPGA-based high-speed signal acquisition system. The tinned semiconductor sample was tested experimentally, for the relationship between gain performance and incident electron energy. The experimental with incident electron energy( 1500-20000eV) bombardment 65μm of semiconductor sample, results show the multiply electron gain with the increase of the incident electron energy, which will provide theoretical basis and technical support to further manufacture of high performance electron bombarded semiconductor sensors.