An analytical solution for the Fermi level of the non-degenerate semiconductor in thermal equilibrium over a wide temperature range

摘要

An analytical solution for the Fermi level energy position for the doped semiconductor in thermal equilibrium is obtained for the non-degenerate case. The presented equation is valid for the full temperature range. Better accuracy of the presented formula should lead to better initial guess value for the subsequent numerical computations in the semiconductor simulation software, thus decreasing the time of convergence and resulting in the better cost-effectiveness of the overall calculation.