Laser induced defects in silicon solar cells and laser annealing

摘要

High power lasers are attractive for low-cost solar cell fabrication. However, laser process can generate crystal lattice defects that would decrease the photovoltaic efficiency. This study examines the effect of long pulsed laser annealing for improving the cell efficiency and results are compared with the short pulsed laser and furnace annealing. Results show that long pulsed laser annealing is effective in increasing the short circuit current for laser processed back-contact solar cells. The short circuit current increases by 1.5 times indicating the removal of defects. Laser annealing would allow widespread use of laser processing method for low-cost solar cell manufacturing.