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Highly selective sensor for trace asenite determination using anodic stripping voltammetry

机译:阳极溶出伏安法测定痕量亚砷酸盐的高选择性传感器

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An arsenite (As (III)) selective membrane of ionophore is deposited on a micro gold electrode surface to determine trace As (III) using anodic stripping voltammetry (ASV). Compared with a sensor without an ionophore membrane ("bare sensor"), the selective sensor's performance is greatly improved due to the membrane's superior As (III) permselectivity. The selective sensor's background current amplitude decreased from 1.375 μA to 0.320 μA, and its standard deviation decreased from 0.150 μA to 0.007 μA, leading to a higher signal-to-noise ratio (S/N). Meanwhile, the sensor's peak current standard deviation also dropped from 0.218 μA to 0.015 μA. Thus, low limit of detection (LOD) of 1.09 ppb is obtained for determining trace As (III). This simple, but highly sensitive selective sensor may lead to wide applications to on-line environmental monitoring.
机译:将离子载体的亚砷(As(III))选择性膜沉积在微金电极表面上,使用阳极溶出伏安法(ASV)测定痕量As(III)。与没有离子载体膜的传感器(“裸传感器”)相比,由于该膜具有出色的As(III)渗透选择性,因此选择性传感器的性能得到了极大的提高。选择性传感器的背景电流幅度从1.375μA降低至0.320μA,其标准偏差从0.150μA降低至0.007μA,从而导致更高的信噪比(S / N)。同时,传感器的峰值电流标准偏差也从0.218μA降至0.015μA。因此,获得了1.09 ppb的低检测下限(LOD),用于测定痕量As(III)。这种简单但高度灵敏的选择性传感器可能会导致在线环境监测的广泛应用。

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