A 670μW inductorless low noise amplifier employing dual capacitive cross coupling and dual negative feedback

摘要

A Sub mW wideband inductorless Low Noise Amplifier (LNA) is presented in this paper. The circuit is based on Common Gate (CG) structure. By utilizing both NMOS and PMOS transistors in Dual Capacitive Cross Coupled (DCCC) scheme the transconductance is boosted. Also by the use of Dual Negative Feedback (DNFB) the intense trade-off between input matching and power consumption is broken. Since NFB is implemented in a current reuse scheme in both NMOS and PMOS sections, the power consumption is further reduced. Forward Body Biasing (FBB) is employed to relax headroom condition. The designed LNA achieves a gain of 18.8 dB with 3dB bandwidth of 2.3 GHz, while input return loss (S11) is better than -10 dB in all frequency band. The minimum Noise Figure (NF) is 2.9 dB and 3rd Input Intercept Point (IIP3) is -2.8 dBm.