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Preparation of COTS TMS570 MCU for use in ionizing radiation environments

机译:制备用于电离辐射环境的COTS TMS570 MCU

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This paper deals with development and irradiation test of a dynamic memory scrubbing routine for the CPU-coupled, SRAM-based memory of the commercial off-the-shelf (COTS) TMS570LS3137 microcontroller. The techniques combine hardware/software co-design concepts, resulting in low design complexity, high performance and high reliability at the same time. The algorithm uses the CPU-coupled ECC Error Correction Code (ECC) mechanism to correct Single Bit Upsets (SBU). It has been developed with the objective of using the COTS microcontroller with dual-CPUs in lockstep as part of a particle accelerator Detector Control System (DCS). The major objective of this paper is to present the on-chip dynamic memory scrubbing mechanism, which prevents SBU error accumulation in the SRAM cells, and provide irradiation test results to proof correct functioning. The current implementation successfully corrects SBUs with a mean time of 5.5 milliseconds as concluded from the tests.
机译:本文讨论了用于动态耦合内存清理例程的开发和辐照测试,该例程适用于商用现货(COTS)TMS570LS3137微控制器的CPU耦合,基于SRAM的存储器。这些技术结合了硬件/软件协同设计概念,从而同时降低了设计复杂度,高性能和高可靠性。该算法使用CPU耦合的ECC纠错码(ECC)机制来更正单个比特置位(SBU)。它的开发旨在将COTS微控制器与双CPU配合使用,作为粒子加速器检测器控制系统(DCS)的一部分。本文的主要目的是提出一种片上动态存储器清理机制,该机制可防止SBU错误在SRAM单元中累积,并提供辐照测试结果以证明功能正确。根据测试得出的结论,当前实施成功纠正了平均时间为5.5毫秒的SBU。

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