Performance analysis of a SiC-based single-phase H-bridge inverter with active power decoupling

摘要

This paper focuses on the performance analysis of a single-phase inverter, in H-bridge configuration, implemented with silicon carbide (SiC) transistors, which includes an active power decoupling solution that does not require additional power semiconductors. The system is investigated in terms of voltage and current stress and how the efficiency is affected in comparison with the conventional H-bridge inverter. Moreover, the paper also includes a comparison of the inverter implemented with SiC MOSFETs and with classical silicon-based IGBTs. The analysis is supported by simulation and experimental results based on a 1kVA laboratory system.