Numerical Langevine-like method for modelling the noise currents in semiconductors

摘要

This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.