Antimonide-based semiconductors for optoelectronic devices

摘要

We report high quality InAsSb films grown on Ge substrates with a GaAs intermediate layer via metal-organic chemical vapor deposition. The properties of the grown InAsSb films are systematically analysed. It is found that the grown InAsSb films by this method have high quality with very smooth, mirror-like morphology, and high optical quality. In particular, strong PL peak at around 3550 nm can be observed even at room temperature, which demonstrates the capabilities of the grown InAsSb films for room temperature MIR optoelectronic application. This work provides a simple and feasible strategy for the growth of high quality InAsSb films on Ge substrate.