This paper presents the design and characterization of 1.8V bandgap voltage reference fabricated using Siltera's 0.18um CMOS process technology. The proposed bandgap voltage reference employed two-stage amplifier, start-up and power down circuit. The paper focuses on circuit analysis using SPECTRE and Monte Carlo, layout design technique for reducing mismatch and silicon characterization. The result shows the designed bandgap voltage reference generates a stable voltage reference at 1.204V with average temperature coefficient of 6.5ppm/oC. The power dissipation for this bandgap voltage reference is 150uW under 1.8V supply voltage and it occupies silicon area of 370um×300um.
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机译：本文介绍了使用Siltera的0.18um CMOS工艺技术制造的1.8V带隙电压参考的设计和表征。 所提出的带隙电压参考采用两级放大器，启动和关闭电路。 本文侧重于使用幽灵和蒙特卡罗的电路分析，布局设计技术来减少不匹配和硅表征。 结果表明，设计的带隙电压基准引用在1.204V下产生稳定的电压基准，平均温度系数为6.5ppm / o c。 该带隙电压参考的功耗为150UW，低于1.8V电源电压，占370um的硅面积为300um。
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