The Influence of Doping Concentration, Temperature, and Electric Field on Mobility of Silicone Carbide Materials

摘要

This paper presents a study of the performance of the three most important silicone carbide (SiC) polytypes namely4H, 6H and 3C-SiC. The models describe the dependence of electron mobility on doping concentration, temperature, and electric field. The results show that SiC materials mobility almost degraded with increasing the doping concentration, temperature, and electric field. The significant degradation appear over the entire range of the electric field, which record, from 98% to 98.8% degradation. Temperature increase degrades the electron mobility from 80% to 84% and doping concentration increase degrades it by 34% to 50%. 4H-SiC behaves the better electron mobility among SiC materials. In addition, the models study the material conductivity under influence of electric field. 3C-SiC record the highest conductivity over the entire range of electric field. Silicon carbide materials are characterized in terms of Breakdown voltage, maximum frequency, Keyes'' figure of merit, and Johnson''s figure of merit. The results carried out that 4H-SiC has a maximum frequency and power for semiconductor devices. 6H-SiC share 4H-SiC the maximum thermal limitation and high frequency electrical performance.