Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond

摘要

In this paper, a novel sample preparation method for obtaining high-resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.