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Silicon Chip Removal Technique Using Wet Etching Process for Failure Analysis on Multi-Chip Packages (MCP)

机译:硅芯片去除技术使用湿法蚀刻工艺进行多芯片封装失效分析(MCP)

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The work presented here shows the alternative silicon chip removal technique using wet etching process. The effect of various chemical solution and temperature on bulk silicon etching is demonstrated. The etch rate plotted shows NaOH provide the best etch rate compare to other experimented chemical solutions. However, idealized silicon removal technique using wet etching process will need further process development to make it ultimately effective for thin die MCP i.e. a packaging technology with die thickness less than 100um
机译:这里提出的工作显示了使用湿法蚀刻工艺的替代硅芯片去除技术。对各种化学溶液和温度对散装硅蚀刻的影响。绘制速率绘制的蚀刻速率显示NaOH提供与其他实验化学溶液相比的最佳蚀刻速率。然而,使用湿法蚀刻工艺的理想化硅去除技术将需要进一步的工艺开发,使其最终对薄模头MCP有效,模具厚度小于100um的包装技术

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